Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines

Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems. Convergence of disparate technologies, which are compatible with CMOS processing, may allow extension of Moore's Law for a few more years. This paper provides a new approach towards the design and modeling of Memristor (Memory resistor) based Content Addressable Memory (MCAM) using a combination of memristor MOS devices to form the core of a memory/compare logic cell that forms the building block of the CAM architecture. The non-volatile characteristic and the nanoscale geometry together with compatibility of the memristor with CMOS processing technology increases the packing density, provides for new approaches towards power management through disabling CAM blocks without loss of stored data, reduces power dissipation, and has scope for speed improvement as the technology matures.Comment: 10 pages, 11 figure

CMOS Digital Integrated Circuits : Analysis and Design

xvi, 655 p : Il.; 23 c

Efficient Transient Electrothermal Simulation of CMOS VLSI Circuits under Electrical Overstress

Accurate simulation of transient device thermal behavior is essential to predict CMOS VLSI circuit failures under electrical overstress (EOS). In this paper, we present an efficient transient electrothermal simulator that is built upon a SPICE-like engine. The transient device temperature is estimated by the convolution of the device power dissipation and its thermal impulse response which can be derived an analytical solution of the heat diffusion equation. New fast thermal simulation techniques are proposed including a regionwise-exponential (RWE) approximation of thermal impulse response and recursive convolution scheme. The recursive convolution provides a significant performance improvement over the numerical convolution by orders of magnitude, making it computationally feasible to simulate CMOS circuits with many devices. I. Introduction Smaller devices, higher packing density and rising power consumption lead to dramatic temperature increases in deep submicron VLSI circuits. C..

Moment Components: A New Tool for Obtaining Passive Reduced Order Models

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